Physics

Determine the thermal-equilibrium concentrations of electrons and holes in silicon the room temperature.
(a) Calculate the intrinsic carrier concentration in GaAs at T = 400 K and at T = 250 K.
(b) What is the ratio of niat T = 400 K to that at T = 250 K? at T = 300 K if the Fermi energy level is 0.215 eV above the valence-band energy


1.2 (a) A piece of crystalline silicon is doped uniformly with phosphorus atoms. The doping density is 1016 atoms/cm³. Determine the electron and hole densities in this material at
(b)Determine the density of electrons in silicon at T = 300 K (room Assume that Eg=1.42 eV is constant over this temperature range. temperature) and T = 600 K.

A car is traveling at 65 km/hr. The brakes are applied and the car stops in 3 seconds.
What is the car’s acceleration?

How many days is it from one full moon to the next full moon?